PART |
Description |
Maker |
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
SC1532 SC1532CS |
RES 6.19K OHM 1/10W .1% 0603 SMD 400mA SmartLDOTM with Internal Pass MOSFET
|
SEMTECH[Semtech Corporation]
|
RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor Sanyo Semicon Device
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|